SKW30N60
75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: Motor controls Inverter NPT-Technology for 600V
This document summarizes the specifications of Infineon''s SGP30N60 and SGW30N60 fast IGBTs in NPT technology. The key points are: 1) The IGBTs feature 75% lower turn-off losses
SGP30N60 SGW30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E
The 30N60 High Speed IGBT is a high-performance Insulated Gate Bipolar Transistor designed for fast switching applications with low conduction losses. This TO-247 packaged IGBT offers
SGP30N60 SGW30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses
The 30N60 High Speed IGBT is a high-performance Insulated Gate Bipolar Transistor designed for fast switching applications with low conduction
The 30N60 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards. The production status marked on
Find the spec. Find the substitute. Technical parameters, Equivalents, Pinout.
This document summarizes the specifications of Infineon''s SGP30N60 and SGW30N60 fast IGBTs in NPT technology. The key points are: 1) The
Get the 30N60 Power Mosfet 600V 30A TO-247 Package for high voltage switching applications. Low conduction loss and fast switching make it ideal for UPS and welder applications.
We maintain a large inventory of electronic components, which may include 30N60, on hand to ship same day or short lead-time. Veswin Company is a full service 30N60 supplier and
The 30N60 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards. The production status
PDF version includes complete article with source references. Suitable for printing and offline reading.